IRGP4640-EPBF transistor equivalent, insulated gate bipolar transistor.
Low V CE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS comp.
* Inverters
* UPS
* Welding
G Gate
C Collector
E Emitter
Features
Low V CE(ON) and Switching Losses Squa.
Image gallery